View BFQ68_475498.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
BFQ68 NPN 4 GHz wideband transistor
Product specification File under Discrete Semiconductors, SC14 September 1995
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud. Diffused emitter-ballasting resistors and the application of gold sandwich metallization ensure an optimum temperature profile and excellent reliability properties. It features very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers, and is also suitable for use in low power band IV and V equipment. QUICK REFERENCE DATA SYMBOL VCEO IC Ptot fT Vo PARAMETER collector-emitter voltage collector current total power dissipation transition frequency output voltage up to Tc = 110 C IC = 240 mA; VCE = 15 V; f = 500 MHz; Tj = 25 C Ic = 240 mA; VCE = 15 V; dim = -60 dB; RL = 75 ; f(p+q-r) = 793.25 MHz; Tamb = 25 C Ic = 240 mA; VCE = 15 V; RL = 75 ; f = 800 MHz; Tamb = 25 C Ic = 240 mA; VCE = 15 V; RL = 75 ; f = 800 MHz; Tamb = 25 C WARNING Product and environmental safety - toxic materials open base CONDITIONS TYP. - - - 4 1.6 PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
fpage
BFQ68
4 1 3
2 Top view
MBK187
Fig.1 SOT122A.
MAX. 18 300 4.5 - -
UNIT V mA W GHz V
PL1 ITO
output power at 1 dB gain compression third order intercept point
28 47
- -
dBm dBm
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
September 1995
2
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature up to Tc = 110 C open base open collector CONDITIONS open emitter - - - - - -65 - MIN.
BFQ68
MAX. 25 18 2 300 4.5 150 200
UNIT V V V mA W C C
THERMAL RESISTANCE SYMBOL Rth j-c PARAMETER thermal resistance from junction to case THERMAL RESISTANCE 20 K/W
September 1995
3
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO hFE fT Cc Ce Cre Ccs GUM Vo PL1 PARAMETER collector cut-off current DC current gain transition frequency collector capacitance emitter capacitance feedback capacitance collector-stud capacitance maximum unilateral power gain (note 2) output voltage output power at 1 dB gain compression (see Fig.2) third order intercept point (see Fig.2) CONDITIONS IE = 0; VCB = 15 V IC = 240 mA; VCE = 15 V IC = 240 mA; VCE = 15 V; f = 500 MHz IE = ie = 0; VCB = 15 V; f = 1 MHz IC = ic = 0; VEB = 0.5 V; f = 1 MHz IC = 0; VCE = 15 V; f = 1 MHz note 1 IC = 240 mA; VCE = 15 V; f = 800 MHz; Tamb = 25 C note 3 IC = 240 mA; VCE = 15 V; RL = 75 ; Tamb = 25 C; measured at f = 800 MHz note 4 MIN. - 25 - - - - - - - - TYP. - 75 4 3.8 20 2.3 0.8 13 1.6 28
BFQ68
MAX. 50 - - - - - - - - -
UNIT A GHz pF pF pF pF dB V dBm
ITO Notes
-
47
-
dBm
1. Measured with emitter and base grounded. 2. GUM is the maximum unilateral power gain, assuming S12 is zero and S 21 G UM = 10 log ------------------------------------------------------------- dB. 2 2 1 - S 11 1 - S 22 3. dim = -60 dB (see Figs 2 and 7) (DIN 45004B); IC = 240 mA; VCE = 15 V; RL = 75 ; Tamb = 25 C; Vp = Vo at dim = -60 dB; fp = 795.25 MHz; Vq = Vo -6 dB; fq = 803.25 MHz; Vr = Vo -6 dB; fr = 805.25 MHz; measured at f(p+q-r) = 793.25 MHz. 4. IC = 240 mA; VCE = 15 V; RL = 75 ; Tamb = 25 C; Pp = ITO - 6 dB; fp = 800 MHz; Pq = ITO - 6 dB; fq = 801 MHz; measured at f(2q-p) = 802 MHz and at f(2p-q) = 799 MHz.
2
September 1995
4
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
handbook, full pagewidth
2.2 nF 2.2 nF VBB 2.2 k L2 2.2 nF 2.2 nF L1 2.2 nF 75 4.7 1.2 pF 180 DUT 1.2 pF 24 24 75 VCC
1.8 pF
0.68 pF
MEA273
f = 40 to 860 MHz. L1 = L2 = 5 H Ferroxcube choke.
Fig.2 Intermodulation distortion MATV test circuit.
MBB361
MEA272
handbook, halfpage
120
6 handbook, halfpage fT (GHz) 4
h FE
80
40
2
0 0 40 80 120 160 I C (mA)
0 10 10 2 I C (mA)
103
VCE = 10 V; Tj = 25 C.
VCE = 15 V; f = 500 MHz; Tj = 25 C
Fig.3
DC current gain as a function of collector current.
Fig.4
Transition frequency as a function of collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
MEA271
MEA270
handbook, halfpage
6
handbook, halfpage
40
Cc (pF)
gain (dB) 30 4
20
2 10 G UM Is 12 I 0 0 10 VCB (V) 20 0 0.1 1
2
f (GHz)
10
IE = ie = 0; f = 1 MHz
IC = 240 mA; VCE = 15 V; Tamb = 25 C
Fig.5
Collector capacitance as a function of collector-base voltage.
Fig.6 Gain as a function of frequency.
MEA269
handbook, halfpage
20 d im (dB) 30
40
50
60
70 0 100 200 I C (mA) 300
VCE = 15 V; Vo = 1.6 V; f(p+q-r) = 793.25 MHz.
Fig.7
Intermodulation distortion as a function of collector current.
September 1995
6
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
handbook, full pagewidth
1 0.5 2
1200 MHz 0.2 1000 800 500 0 -j 100 0.2 40 5 10 0.2 200 0.5 1 2 5 10 5 10
+j
0.5 1 IC = 240 mA; VCE = 15 V; Tamb = 25 C. Zo = 50 .
2
MEA274
Fig.8 Common emitter input reflection coefficient (S11).
handbook, full pagewidth
90 120 60 1200 MHz 1000 800 500 100 40 200 0.05 0.1 0.15 0
150
30
+ -
180
150
30
120 IC = 240 mA; VCE = 15 V; Tamb = 25 C. 90
60
MEA275
Fig.9 Common emitter forward transmission coefficient (S21).
September 1995
7
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFQ68
handbook, full pagewidth
40 120
90 60
150
100
30
200
180
500 800 1000 1200 MHz 0.05
0.1 0.15 0
150
30
120 IC = 240 mA; VCE = 15 V; Tamb = 25 C. 90
60
MEA277
Fig.10 Common emitter reverse transmission coefficient (S12).
handbook, full pagewidth
1 0.5 2
0.2
5 10
+j 0 -j 0.2 1200 1000 800 500 0.5 200 100 5 1 2 5 10
10
0.2
40 MHz 0.5 1 2
MEA276
IC = 240 mA; VCE = 15 V; Tamb = 25 C. Zo = 50 .
Fig.11 Common emitter output reflection coefficient (S22).
September 1995
8
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BFQ68
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
September 1995
9
Philips Semiconductors
Product specification
NPN 4 GHz wideband transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BFQ68
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1995
10

▲Up To Search▲

Price & Availability of BFQ68

	To Download BFQ68 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .